Oxford Instruments Plasmalab System 100 - ICP 180
Lauri Sainiemi
Lauri Sainiemi lauri.Sainiemi(at)tkk.fi Kestas Grigoras kestas(at)cc.hut.fi
2005
2005
Plasma etching system
Substrate Size:
100 mm wafer. Smaller samples can be clued on top of 100 mm dummy wafer.
Allowed Materials:
Si, GaN, InP, GaAs, photoresists, Al, Cr, Ge, Ti
Forbidden Materials:
Glasses, Noble metals (Au, Ag, Pt, Cu, Pd), Heavy metals (Cd, Pb, Zn), silicones
Availability and Cost:
Availability Class: F
Price Category: Special
Inductively coupled plasma etcher for etching silicon, compound semiconductors and polymers.
Etching of III-V compounds using chlorinated gases (SiCl4, BCl3, Cl2) and deep etching of silicon with SF6 and O2 at cryogenic temperatures
The ion density in an ICP is two orders of magnitude higher than in capacitively coupled plasma systems, fast etch rates, two RF-units allow controlling independently the ion density and the ion energy, substrate holder's temperature range -150°C and 400°C
| Wafer diameter 100 mm Process gases SF6, SiCl4, BCl3, Cl2, N2, O2, H2, Ar Non-uniformity over 100 mm <5 % Working pressure range 1-250 mTorr Electrode RF power 0 - 300 W ICP RF power 0 - 2000 W Electrode temperature -150°C-400°C Typical etch rates: Si 4 µm/min InP 2 µm/min GaAs 2 µm/min GaN 600 nm/mim |