Name and Model: Oxford Plasmalab80Plus (+CVD)
Contact Person: Antti Nuottajärvi nuanka@jyu.fi +358503956002
Year of Manufacture: 2004
Year of Installation: 2004
General Technical Information: Reactive Ion Etcher combined in Plasmalab 80+ system with PECVD
Desrcription of Use: Dry etching of Si, SiN, SiO and thin metal films
Key Features and Accessories: RF driven electrode. He assisted backside cooling. Cryo etch recipes using liquid Nitrogen table cooling.
Key Specifications:
RF power: 0-300 W @ 13.56 MHz
Gases in use: CHF3, SF6, O2, Ar
Wafer size up to 100 mm
Software: PC2000
Photograph:
Location: University of Jyväskylä, Nanoscience Center, Cleanroom Survontie 9, 40500 Jyväskylä
City: Jyväskylä
Additional information:
Booking:
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